Invention Grant
- Patent Title: Device and method for testing semiconductor device
- Patent Title (中): 半导体器件测试装置及方法
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Application No.: US13198879Application Date: 2011-08-05
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Publication No.: US08917103B2Publication Date: 2014-12-23
- Inventor: Koichi Morino , Kouichi Ikeda
- Applicant: Koichi Morino , Kouichi Ikeda
- Applicant Address: JP Tokyo
- Assignee: Ricoh Company, Ltd.
- Current Assignee: Ricoh Company, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Cooper & Dunham LLP
- Priority: JP2010-178442 20100809
- Main IPC: G01R31/10
- IPC: G01R31/10 ; G01R31/02 ; H01L35/00 ; G01R31/28

Abstract:
A testing method for testing a semiconductor device includes heating the semiconductor device until the temperature of the semiconductor device reaches a predetermined temperature; conducting other functional tests other than testing of the overheat protection function in a second step after the temperature of the semiconductor device has reached the predetermined temperature; allowing the semiconductor device to generate heat by itself such that the overheat protection function of the semiconductor device is activated, detecting a first diode forward voltage of a desired diode contained in the semiconductor device when the overheat protection function of the semiconductor device is activated and computing a first computational temperature of the semiconductor device based on the detected first diode forward voltage of the desired diode contained in the semiconductor device; and determining whether the computed first computational temperature of the semiconductor device resides in the overheat protection function activating temperature range.
Public/Granted literature
- US08860445B2 Device and method for testing semiconductor device Public/Granted day:2014-10-14
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