发明授权
- 专利标题: Method of maintaining a memory state
- 专利标题(中): 保持记忆状态的方法
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申请号: US13792202申请日: 2013-03-11
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公开(公告)号: US08902663B1公开(公告)日: 2014-12-02
- 发明人: Zvi Or-Bach , Yuniarto Widjaja
- 申请人: Monolithic 3D Inc.
- 申请人地址: US CA San Jose
- 专利权人: Monolithic 3D Inc.
- 当前专利权人: Monolithic 3D Inc.
- 当前专利权人地址: US CA San Jose
- 主分类号: G11C16/04
- IPC分类号: G11C16/04 ; G11C16/02
摘要:
A method of maintaining a memory state of a 3D memory, wherein the memory includes at least a first cell and a second cell overlying the first cell, the method including: applying a back-bias to the first cell and the second cell without interrupting data access to the memory, and generating at least two stable floating body charge levels of the memory state.
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