发明授权
- 专利标题： Semiconductor memory device and method for manufacturing the same
- 专利标题（中）： 半导体存储器件及其制造方法
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申请号： US13414988申请日： 2012-03-08
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公开(公告)号： US08901635B2公开(公告)日： 2014-12-02
- 发明人: Jun Fujiki , Yoshiaki Fukuzumi , Hideaki Aochi , Tomoko Fujiwara
- 申请人： Jun Fujiki , Yoshiaki Fukuzumi , Hideaki Aochi , Tomoko Fujiwara
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2011-198806 20110912; JP2011-207058 20110922
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L27/115 ; H01L29/66
摘要：
According to one embodiment, a semiconductor memory device includes a stacked body, a semiconductor pillar, an insulating film, and a charge storage film. The stacked body includes a plurality of electrode films stacked with an inter-layer insulating film provided between the electrode films. The semiconductor pillar pierces the stacked body. The insulating film is provided between the semiconductor pillar and the electrode films on an outer side of the semiconductor pillar with a gap interposed. The charge storage film is provided between the insulating film and the electrode films. The semiconductor pillar includes germanium. An upper end portion of the semiconductor pillar is supported by an interconnect provided above the stacked body.
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