发明授权
- 专利标题： Polishing method of semiconductor structure
- 专利标题（中）： 半导体结构抛光方法
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申请号： US14021419申请日： 2013-09-09
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公开(公告)号： US08901003B1公开(公告)日： 2014-12-02
- 发明人: Ji-Gang Pan , Han-Chuan Fang , Boon-Tiong Neo
- 申请人： United Microelectronics Corp.
- 申请人地址： TW Hsinchu
- 专利权人： United Microelectronics Corp.
- 当前专利权人： United Microelectronics Corp.
- 当前专利权人地址： TW Hsinchu
- 代理机构： J.C. Patents
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461 ; H01L21/321 ; H01L21/02
摘要：
A polishing method of a semiconductor device is disclosed. A substrate having a first side and a second side opposite to the first side is provided. The substrate has a device layer formed on the first side and a plurality of trench isolation structures therein extending from the first side to the second side. A main polishing step is performed to the second side of the substrate until a surface of at least one of the trench isolation structures is exposed. An auxiliary polishing step is then performed to the second side of the substrate. Besides, a silicon-to-oxide selectivity of the main polishing step is different from a silicon-to-oxide selectivity of the auxiliary step.
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