发明授权
- 专利标题: Reliability in semiconductor device control
- 专利标题(中): 半导体器件控制的可靠性
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申请号: US14129015申请日: 2011-06-27
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公开(公告)号: US08896364B2公开(公告)日: 2014-11-25
- 发明人: Jürgen Häfner , Mikael Davidsson , Roland Siljeström
- 申请人: Jürgen Häfner , Mikael Davidsson , Erika Siljeström
- 申请人地址: CH Zurich
- 专利权人: ABB Technology AG
- 当前专利权人: ABB Technology AG
- 当前专利权人地址: CH Zurich
- 代理机构: Birch, Stewart, Kolasch & Birch, LLP
- 国际申请: PCT/EP2011/060720 WO 20110627
- 国际公布: WO2013/000499 WO 20130103
- 主分类号: H03K17/687
- IPC分类号: H03K17/687 ; H03K17/06 ; H03K17/94
摘要:
A gate control device for a semiconductor device includes at least one power supply module, at least one optical communication interface for receiving optical signals from two valve control units and converting them to electric signals for supply to a corresponding power supply module, where in normal operations mode one valve control unit is an active valve control unit and the other is a standby valve control unit, where the optical signal of an active unit energizes the gate control device and provides semiconductor device controlling data, a semiconductor device control module and a reliability control module that performs selection of active valve control unit.
公开/授权文献
- US20140203847A1 RELIABILITY IN SEMICONDUCTOR DEVICE CONTROL 公开/授权日:2014-07-24
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