Invention Grant
- Patent Title: Nonvolatile semiconductor memory device and method of manufacturing the same
- Patent Title (中): 非易失性半导体存储器件及其制造方法
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Application No.: US13727160Application Date: 2012-12-26
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Publication No.: US08896052B2Publication Date: 2014-11-25
- Inventor: Misako Morota , Hideyuki Nishizawa , Masaya Terai , Shigeki Hattori , Koji Asakawa
- Applicant: Misako Morota , Hideyuki Nishizawa , Masaya Terai , Shigeki Hattori , Koji Asakawa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L21/28 ; H01L29/51 ; H01L29/66 ; H01L27/115
Abstract:
A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film that is formed on the semiconductor layer and includes a first organic molecular film including first organic molecules each having an alkyl molecular chain as the main chain; a charge storage layer formed on the tunnel insulating film, the charge storage layer being made of an inorganic material; a block insulating film formed on the charge storage layer; and a control gate electrode formed on the block insulating film.
Public/Granted literature
- US20140061763A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-03-06
Information query
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