发明授权
- 专利标题: Light emitting diode
- 专利标题(中): 发光二极管
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申请号: US12943918申请日: 2010-11-10
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公开(公告)号: US08896012B2公开(公告)日: 2014-11-25
- 发明人: Chih-Ching Cheng
- 申请人: Chih-Ching Cheng
- 申请人地址: TW Taichung County
- 专利权人: Huga Optotech, Inc.
- 当前专利权人: Huga Optotech, Inc.
- 当前专利权人地址: TW Taichung County
- 代理机构: Patterson + Sheridan, LLP
- 优先权: TW99128619A 20100826
- 主分类号: H01L29/72
- IPC分类号: H01L29/72 ; H01L33/38 ; H01L33/20 ; H01L33/08 ; H01L33/44
摘要:
A light-emitting diode includes a substrate, a first semiconductor layer above the substrate, an active layer above the first semiconductor layer, a second semiconductor layer above the active layer, wherein the active layer is between the first semiconductor layer and the second semiconductor layer a trench penetrating through the second semiconductor layer and the active layer to expose the first semiconductor layer a first electrode disposed at a bottom of the trench, wherein the first electrode includes at least one first finger, an insulating layer covering the first electrode, and a second electrode including at least one second finger on the insulating layer, wherein the second finger overlaps with the first finger and the second finger has a width smaller than that of the trench.
公开/授权文献
- US20120049234A1 HIGH-BRIGHTNESS LIGHT EMITTING DIODE 公开/授权日:2012-03-01
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