发明授权
- 专利标题： Method of manufacturing semiconductor device and substrate processing apparatus
- 专利标题（中）： 制造半导体器件和衬底处理设备的方法
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申请号： US13582861申请日： 2011-02-18
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公开(公告)号： US08895457B2公开(公告)日： 2014-11-25
- 发明人: Naonori Akae , Kotaro Murakami , Yoshiro Hirose , Kenji Kameda
- 申请人： Naonori Akae , Kotaro Murakami , Yoshiro Hirose , Kenji Kameda
- 申请人地址： JP Tokyo
- 专利权人： Hitachi Kokusai Electric Inc.
- 当前专利权人： Hitachi Kokusai Electric Inc.
- 当前专利权人地址： JP Tokyo
- 代理机构： Oliff PLC
- 优先权： JP2010-050752 20100308
- 国际申请： PCT/JP2011/053508 WO 20110218
- 国际公布： WO2011/111498 WO 20110915
- 主分类号： C23C16/34
- IPC分类号： C23C16/34 ; C23C16/40 ; B08B5/00 ; H01L21/31 ; C23C16/00 ; C23C16/44 ; C23C16/30 ; C23C16/455 ; H01L21/02
摘要：
To provide a method of manufacturing a semiconductor device, including: forming a thin film different from a silicon oxide film on a substrate by supplying a processing gas into a processing vessel in which the substrate is housed; removing a deposit including the thin film adhered to an inside of the processing vessel by supplying a fluorine-containing gas into the processing vessel after executing forming the thin film prescribed number of times; and forming a silicon oxide film having a prescribed film thickness on the inside of the processing vessel by alternately supplying a silicon-containing gas, and an oxygen-containing gas and a hydrogen-containing gas into the heated processing vessel in which a pressure is set to be less than an atmospheric pressure after removing the deposit.
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