Invention Grant
US08895210B2 Method for fabricating pellicle, photo mask, and semiconductor device
有权
防护薄膜，光掩模和半导体器件的制造方法
- Patent Title: Method for fabricating pellicle, photo mask, and semiconductor device
- Patent Title (中): 防护薄膜，光掩模和半导体器件的制造方法
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Application No.: US13680415Application Date: 2012-11-19
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Publication No.: US08895210B2Publication Date: 2014-11-25
- Inventor: Masato Suzuki , Tetsuro Nakasugi
- Applicant: Masato Suzuki , Tetsuro Nakasugi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2011-253638 20111121
- Main IPC: G03F1/62
- IPC: G03F1/62 ; G03F1/64 ; G03F1/68
Abstract:
An aspect of the present embodiment, there is provided a method for fabricating a pellicle, including acquiring a shape of a pellicle frame, deciding a thickness distribution of an adhesive to be coated on the pellicle frame on a basis of the acquired shape of the pellicle frame, and coating the adhesive on the pellicle frame based on the decision of the thickness distribution.
Public/Granted literature
- US20130130158A1 METHOD FOR FABRICATING PELLICLE, PHOTO MASK, AND SEMICONDUCTOR DEVICE Public/Granted day:2013-05-23
Information query
