Invention Grant
US08877096B2 Near infrared doped phosphors having a zinc, germanium, gallate matrix
有权
具有锌，锗，没食子酸酯基质的近红外掺杂磷光体
- Patent Title: Near infrared doped phosphors having a zinc, germanium, gallate matrix
- Patent Title (中): 具有锌，锗，没食子酸酯基质的近红外掺杂磷光体
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Application No.: US13394627Application Date: 2010-09-21
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Publication No.: US08877096B2Publication Date: 2014-11-04
- Inventor: Zhengwei Pan , Yi-Ying Lu
- Applicant: Zhengwei Pan , Yi-Ying Lu
- Applicant Address: US GA Athens
- Assignee: University of Georgia Research Foundation, Inc.
- Current Assignee: University of Georgia Research Foundation, Inc.
- Current Assignee Address: US GA Athens
- Agency: Mueting Raasch & Gebhardt, P.A.
- International Application: PCT/US2010/049625 WO 20100921
- International Announcement: WO2011/035292 WO 20110324
- Main IPC: C09K11/66
- IPC: C09K11/66 ; C09K11/08 ; H01L33/00 ; C09K11/68 ; C04B35/01 ; C04B35/16 ; C04B35/457 ; C09D5/22 ; C09K11/62 ; H01L33/50
Abstract:
Phosphors based on transition metal-activated gallates, particularly Cr3+- and Ni2+-activated zinc germanium gallates, are disclosed herein. In some embodiments such phosphors can exhibit persistent infrared phosphorescence for as long as 400 hours. Such phosphors can be used, for example, as components of a luminescent paint.
Public/Granted literature
- US20120193578A1 NEAR INFRARED DOPED PHOSPHORS HAVING A ZINC, GERMANIUM, GALLATE MATRIX Public/Granted day:2012-08-02
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