Invention Grant
- Patent Title: Optical semiconductor device
- Patent Title (中): 光半导体器件
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Application No.: US14132170Application Date: 2013-12-18
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Publication No.: US08855163B2Publication Date: 2014-10-07
- Inventor: Haruhiko Yoshida , Kazuya Ohira , Mizunori Ezaki
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-288321 20121228
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/026

Abstract:
An optical semiconductor device of one embodiment includes: a first semiconductor layer of a first conductivity type; an active layer provided on the first semiconductor layer and has a ring- or disk-like shape; a second semiconductor layer of a second conductivity type that is provided on the active layer and has a ring- or disk-like shape; a first electrode provided on the first semiconductor layer; and a second electrode provided on the second semiconductor layer. The first semiconductor layer includes a first region having a ring- or disk-like shape, and a second region provided around the outer circumference of the first region and has a smaller thickness than the first region. The first electrode is provided on the second region, and a groove or holes are provided in a portion of the second region located between the first region and the first electrode.
Public/Granted literature
- US20140185641A1 OPTICAL SEMICONDUCTOR DEVICE Public/Granted day:2014-07-03
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