发明授权
- 专利标题： Semiconductor light-emitting device and method for forming the same
- 专利标题（中）： 半导体发光器件及其形成方法
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申请号： US13045202申请日： 2011-03-10
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公开(公告)号： US08853722B2公开(公告)日： 2014-10-07
- 发明人: Min-Hsun Hsieh , Chia-Fen Tsai
- 申请人： Min-Hsun Hsieh , Chia-Fen Tsai
- 申请人地址： TW Hsin-Chu
- 专利权人： Epistar Corporation
- 当前专利权人： Epistar Corporation
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Muncy, Geissler, Olds & Lowe, P.C.
- 优先权： TW91114688A 20020715; TW93126439A 20040901
- 主分类号： H01L33/50
- IPC分类号： H01L33/50 ; H01L33/40 ; H01L33/46 ; H01L33/00 ; H01L33/42
摘要：
A semiconductor light-emitting device includes a light-impervious substrate, a bonding structure, a semiconductor light-emitting stack, and a fluorescent material structure overlaying the semiconductor light-emitting stack. The semiconductor light-emitting stack is separated from a growth substrate and bonded to the light-impervious substrate via the bonding structure. A method for producing the semiconductor light-emitting device includes separating a semiconductor light-emitting stack from a growth substrate, bonding the semiconductor light-emitting stack to a light-impervious substrate, and forming a fluorescent material structure over the semiconductor light-emitting stack.
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