Invention Grant
US08852762B2 Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers
有权
具有合成反铁磁存储层和非固定参考层的磁性随机存取存储器
- Patent Title: Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers
- Patent Title (中): 具有合成反铁磁存储层和非固定参考层的磁性随机存取存储器
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Application No.: US13562868Application Date: 2012-07-31
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Publication No.: US08852762B2Publication Date: 2014-10-07
- Inventor: David W. Abraham , Michael C. Gaidis , Janusz J. Nowak , Daniel C. Worledge
- Applicant: David W. Abraham , Michael C. Gaidis , Janusz J. Nowak , Daniel C. Worledge
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: G11B5/66
- IPC: G11B5/66 ; G11B5/65 ; G11B5/64 ; G11B5/667 ; G11B5/673
Abstract:
A synthetic antiferromagnetic device includes a reference layer having a first and second ruthenium layer, a magnesium oxide spacer layer disposed on the reference layer, a cobalt iron boron layer disposed on the magnesium oxide spacer layer and a third ruthenium layer disposed on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0 angstroms to 18 angstroms.
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