发明授权
- 专利标题: Shunt regulator for adverse voltage/circuit conditions
- 专利标题(中): 用于不利电压/电路条件的并联稳压器
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申请号: US13618444申请日: 2012-09-14
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公开(公告)号: US08847565B2公开(公告)日: 2014-09-30
- 发明人: Madan Mohan Reddy Vemula
- 申请人: Madan Mohan Reddy Vemula
- 申请人地址: NL Eindhoven
- 专利权人: NXP B.V.
- 当前专利权人: NXP B.V.
- 当前专利权人地址: NL Eindhoven
- 主分类号: G05F1/00
- IPC分类号: G05F1/00
摘要:
Low voltage circuits are protected from high voltage/current conditions, as may be implemented in accordance with one or more example embodiments. An additional/secondary shunt circuit/switch is implemented to shunt additional current as supply voltage steps or otherwise increases. In some implementations, the secondary shunt circuit includes a transistor having its drain coupled to its gate via a large capacitance that operates to maintain the gate voltage at about a constant level. This operates to facilitate the draining of additional current, and maintaining a low bandgap voltage supply level.
公开/授权文献
- US20140077788A1 SHUNT REGULATOR 公开/授权日:2014-03-20
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