发明授权
- 专利标题： Apparatus and method for flash memory address translation
- 专利标题（中）： 闪存地址转换的装置和方法
-
申请号： US13025267申请日： 2011-02-11
-
公开(公告)号： US08832356B2公开(公告)日： 2014-09-09
- 发明人: Sung Hoon Baek , Jin Kyu Kim
- 申请人： Sung Hoon Baek , Jin Kyu Kim
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR10-2010-0012821 20100211
- 主分类号： G06F12/00
- IPC分类号： G06F12/00 ; G06F12/02
摘要：
Provided is a flash memory address translation method that may maintain at least one chip that may be divided based on at least one horizontal bank and at least one vertical channel, and may divide the at least one bank by at least one stripe partition, managing an error of a chip without deterioration in a performance of a small writing.
公开/授权文献
信息查询
