发明授权
- 专利标题： Multiple step programming in a memory device
- 专利标题（中）： 在存储器件中进行多步编程
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申请号： US13548342申请日： 2012-07-13
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公开(公告)号： US08824203B2公开(公告)日： 2014-09-02
- 发明人: Violante Moschiano , Mason Jones
- 申请人： Violante Moschiano , Mason Jones
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Dicke, Billig & Czaja, PLLC
- 主分类号： G11C11/34
- IPC分类号： G11C11/34 ; G11C11/56 ; G11C16/10 ; G11C16/04
摘要：
A method for multiple step programming programs data to an even page of memory cells. The even page of memory cells is read into a page buffer and the uncertain data is removed. An odd page of memory cells is programmed and the data from the even page data from the page buffer is reprogrammed to the even page of memory cells without the uncertain data.
公开/授权文献
- US20140016409A1 MULTIPLE STEP PROGRAMMING IN A MEMORY DEVICE 公开/授权日：2014-01-16
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