Invention Grant
- Patent Title: Transistors with an extension region having strips of differing conductivity type and methods of forming the same
- Patent Title (中): 具有延伸区域的晶体管具有不同导电类型的条带及其形成方法
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Application No.: US12639158Application Date: 2009-12-16
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Publication No.: US08815667B2Publication Date: 2014-08-26
- Inventor: Michael Smith , Vladimir Mikhalev , Puneet Sharma , Zia Alan Shafi , Henry Jim Fulford
- Applicant: Michael Smith , Vladimir Mikhalev , Puneet Sharma , Zia Alan Shafi , Henry Jim Fulford
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/338
- IPC: H01L21/338
Abstract:
Methods of forming transistors and transistors are disclosed, such as a transistor having a gate dielectric over a semiconductor having a first conductivity type, a control gate over the gate dielectric, source and drain regions having a second conductivity type in the semiconductor having the first conductivity type, and strips having the second conductivity type within the semiconductor having the first conductivity type and interposed between the control gate and at least one of the source and drain regions.
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Information query
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