发明授权
- 专利标题: Structural feature formation within an integrated circuit
- 专利标题(中): 集成电路内的结构特征形成
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申请号: US13067240申请日: 2011-05-18
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公开(公告)号: US08812997B2公开(公告)日: 2014-08-19
- 发明人: Gregory Munson Yeric
- 申请人: Gregory Munson Yeric
- 申请人地址: GB Cambridge
- 专利权人: ARM Limited
- 当前专利权人: ARM Limited
- 当前专利权人地址: GB Cambridge
- 代理机构: Nixon & Vanderhye P.C.
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
An integrated circuit is formed using an lithographic process including a stage of forming a lithographic layer from a plurality of separately printed pattern layers. Within the integrated circuit there is formed a circuit including at least two devices that are matched devices such that the performance of the circuit is degraded if the match devices deviate from having matched performance characteristics. Dummy contacts 32 (structural features) are provided within the circuit design so as to force allocation of functional contacts (structural features) of the matched devices into the same pattern layer thereby reducing inter-device variation in contact position and/or size.
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