发明授权
- 专利标题： Through silicon via noise suppression using buried interface contacts
- 专利标题（中）： 通过硅通过噪声抑制使用埋入式接口
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申请号： US13408300申请日： 2012-02-29
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公开(公告)号： US08809995B2公开(公告)日： 2014-08-19
- 发明人: Xiaomin Duan , Xiaoxiong Gu , Yong Liu , Joel A. Silberman
- 申请人： Xiaomin Duan , Xiaoxiong Gu , Yong Liu , Joel A. Silberman
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Anne Dougherty
- 主分类号： H01L23/528
- IPC分类号： H01L23/528
摘要：
Circuits for shielding devices from electromagnetic coupling with through-silicon vias are shown that include a substrate having a through via, which provides access to a device layer on a first surface of the circuit to a device layer on a second surface of the circuit; a conductive layer on the first side of the substrate; a contact point on one of the device layers; and a grounded buried interface tie on the conductive layer, adjacent to the contact point, to isolate the contact point from coupling noise.
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