发明授权
- 专利标题： Semiconductor element and semiconductor device
- 专利标题（中）： 半导体元件和半导体器件
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申请号： US13519010申请日： 2011-10-27
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公开(公告)号： US08809871B2公开(公告)日： 2014-08-19
- 发明人: Masao Uchida
- 申请人： Masao Uchida
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 优先权： JP2010-243137 20101029
- 国际申请： PCT/JP2011/006019 WO 20111027
- 国际公布： WO2012/056704 WO 20120503
- 主分类号： H01L29/15
- IPC分类号： H01L29/15
摘要：
A semiconductor element according to the present invention includes: a semiconductor substrate of a first conductivity type; a first silicon carbide semiconductor layer of the first conductivity type on the semiconductor substrate; a body region of a second conductivity type defined in the first silicon carbide semiconductor layer; an impurity region of the first conductivity type defined in the body region; a second silicon carbide semiconductor layer of the first conductivity type on the first silicon carbide semiconductor layer; a gate insulating film on the second silicon carbide semiconductor layer; a gate electrode on the gate insulating film; a first ohmic electrode connected to the impurity region; and a second ohmic electrode on the back surface of the semiconductor substrate. The body region includes first and second body regions. The average impurity concentration of the first body region is twice or more as high as that of the second body region. And the bottom of the impurity region is deeper than that of the first body region.
公开/授权文献
- US20120286290A1 SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE 公开/授权日：2012-11-15
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