Invention Grant
- Patent Title: Photodetector circuit
- Patent Title (中): 光电检测器电路
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Application No.: US13714149Application Date: 2012-12-13
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Publication No.: US08809762B2Publication Date: 2014-08-19
- Inventor: Yoshihisa Tabuchi , Yasunori Nagata
- Applicant: Semiconductor Components Industries, LLC
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC
- Current Assignee: Semiconductor Components Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Robert F. Hightower
- Priority: JP2011-272018 20111213
- Main IPC: H01J40/14
- IPC: H01J40/14 ; G01J1/18 ; G01J1/44
Abstract:
Light from a photodiode is detected using a phototransistor. At the time of startup, set data concerning a detected current is received at a communication interface, and the received set data is compared with the detected current. A control unit adjusts a current of the phototransistor so that the detected current matches the set data.
Public/Granted literature
- US20130256507A1 PHOTODETECTOR CIRCUIT Public/Granted day:2013-10-03
Information query
