An apparatus and method of controllably stimulating the growth and evolution of 2D and 3D structures from a thin film mass transfer process such that complex devices can be designed and fabricated having engineered features of different heights and separation distances in a single or few process steps are provided. More specifically, the apparatus and method allows for the construction of engineered temperature gradient fields capable of controlling for, and taking into account, proximity effects during the growth and evolution of adjacent structures, which in turn allows for the production of technologically significant micro and nanoscale devices in a number of fields.