Non-volatile memory devices having a floating gate cap between a floating gate and a gate insulating layer

Invention Grant

US08791520B2 Non-volatile memory devices having a floating gate cap between a floating gate and a gate insulating layer 有权

Title translation: 在浮置栅极和栅极绝缘层之间具有浮动栅极盖的非易失性存储器件

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Patent Title: Non-volatile memory devices having a floating gate cap between a floating gate and a gate insulating layer
Patent Title (中): 在浮置栅极和栅极绝缘层之间具有浮动栅极盖的非易失性存储器件
Application No.: US12986553

Application Date: 2011-01-07
Publication No.: US08791520B2

Publication Date: 2014-07-29
Inventor: Jaeduk Lee , Albert Fayrushin , ByungKyu Cho , Jungdal Choi , Sunghoi Hur , Kwang Soo Seol , Dohyun Lee
Applicant: Jaeduk Lee , Albert Fayrushin , ByungKyu Cho , Jungdal Choi , Sunghoi Hur , Kwang Soo Seol , Dohyun Lee
Applicant Address: KR
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR
Agency: Myers Bigel Sibley & Sajovec, PA
Priority: KR10-2010-0001757 20100108
Main IPC: H01L29/788
IPC: H01L29/788 ; H01L29/792

Non-volatile memory devices having a floating gate cap between a floating gate and a gate insulating layer

Abstract:

Provided are nonvolatile memory devices and a method of forming the same. A tunnel insulating pattern is provided on a substrate, and a floating gate is provided on the tunnel insulating pattern. A floating gate cap having a charge trap site is provided on the floating gate, and a gate dielectric pattern is provided on the floating gate cap. A control gate is provided on the gate dielectric pattern.

Abstract(Chinese):

提供了非易失性存储器件及其形成方法。隧道绝缘图案设置在基板上，并且浮动栅极设置在隧道绝缘图案上。在浮置栅极上设置具有电荷陷阱位置的浮动栅极盖，并且在浮动栅极盖上设置栅极电介质图案。控制栅极设置在栅极电介质图案上。

Public/Granted literature

US20110169068A1 NON-VOLATILE MEMORY DEVICES HAVING A FLOATING GATE CAP BETWEEN A FLOATING GATE AND A GATE INSULATING LAYER Public/Granted day:2011-07-14

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的
H01L29/788	......带有浮栅的