Invention Grant
US08785283B2 Method for forming semiconductor structure having metal connection
有权
用于形成具有金属连接的半导体结构的方法
- Patent Title: Method for forming semiconductor structure having metal connection
- Patent Title (中): 用于形成具有金属连接的半导体结构的方法
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Application No.: US13705183Application Date: 2012-12-05
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Publication No.: US08785283B2Publication Date: 2014-07-22
- Inventor: Chieh-Te Chen , Feng-Yi Chang , Chih-Sen Huang , Ching-Wen Hung , Ching-Pin Hsu
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/66
Abstract:
The present invention provides a method for forming a semiconductor structure having a metal connect. A substrate is provided, and a transistor and a first ILD layer are formed thereon. A first contact plug is formed in the first ILD layer to electrically connect the source/drain region. A second ILD layer and a third ILD layer are formed on the first ILD layer. A first opening above the gate and a second opening above the first contact plug are formed, wherein a depth of the first contact plug is deeper than that of the second opening. Next, the first opening and the second opening are deepened. Lastly, a metal layer is filled into the first opening and the second opening to respectively form a first metal connect and a second metal connect.
Public/Granted literature
- US20140154852A1 METHOD FOR FORMING SEMICONDUCTOR STRUCTURE HAVING METAL CONNECTION Public/Granted day:2014-06-05
Information query
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