Invention Grant
- Patent Title: Reduced plasmon shield-generator gap structure and process
- Patent Title (中): 减少等离子体屏蔽发生器间隙结构和工艺
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Application No.: US13654490Application Date: 2012-10-18
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Publication No.: US08773803B2Publication Date: 2014-07-08
- Inventor: Xuhui Jin , Hiroyuki Ito , Shigeki Tanemura , Dayu Zhou
- Applicant: Headway Technologies, Inc.
- Applicant Address: US CA Milpitas
- Assignee: Headway Technologies, Inc.
- Current Assignee: Headway Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: G11B5/02
- IPC: G11B5/02
Abstract:
Three structures, and processes for manufacturing them, that improve the performance of a TAMR feature in a magnetic write head are disclosed. This improvement is achieved by making the separation between the edge plasmon generator and the plasmon shield less than the separation between the edge plasmon generator and the optical wave-guide.
Public/Granted literature
- US20140112115A1 Reduced Plasmon Shield-Generator Gap Structure and Process Public/Granted day:2014-04-24
Information query
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