发明授权
US08771632B2 Methods of forming metal oxide nanostructures, and nanostructures thereof
有权
形成金属氧化物纳米结构的方法及其纳米结构
- 专利标题: Methods of forming metal oxide nanostructures, and nanostructures thereof
- 专利标题(中): 形成金属氧化物纳米结构的方法及其纳米结构
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申请号: US13571791申请日: 2012-08-10
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公开(公告)号: US08771632B2公开(公告)日: 2014-07-08
- 发明人: Ho-Cheol Kim , Robert D. Miller , Oun Ho Park
- 申请人: Ho-Cheol Kim , Robert D. Miller , Oun Ho Park
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Cantor Colburn LLP
- 主分类号: C01G23/00
- IPC分类号: C01G23/00 ; B05D3/06
摘要:
A method of forming a metal oxide nanostructure comprises disposing a chelated oligomeric metal oxide precursor on a solvent-soluble template to form a first structure comprising a deformable chelated oligomeric metal oxide precursor layer; setting the deformable chelated oligomeric metal oxide precursor layer to form a second structure comprising a set metal oxide precursor layer; dissolving the solvent-soluble template with a solvent to form a third structure comprising the set metal oxide precursor layer; and thermally treating the third structure to form the metal oxide nanostructure.
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