发明授权
US08767496B2 Bias sensing in DRAM sense amplifiers through voltage-coupling/decoupling device
有权
通过电压耦合/去耦器件在DRAM读出放大器中进行偏置感测
- 专利标题： Bias sensing in DRAM sense amplifiers through voltage-coupling/decoupling device
- 专利标题（中）： 通过电压耦合/去耦器件在DRAM读出放大器中进行偏置感测
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申请号： US13039169申请日： 2011-03-02
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公开(公告)号： US08767496B2公开(公告)日： 2014-07-01
- 发明人: David J. McElroy , Stephen L. Casper
- 申请人： David J. McElroy , Stephen L. Casper
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Dorsey & Whitney LLP
- 主分类号： G11C7/00
- IPC分类号： G11C7/00
摘要：
Voltage coupling/decoupling devices are provided within DRAM devices for improving the bias sensing of sense amplifiers and thus the refresh performance. The voltage coupling/decoupling devices couple or decouple bias voltage from corresponding digit lines coupled to the sense amplifiers. By coupling and decoupling voltage from the digit lines, the time interval between refresh operations can be increased.
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