According to one embodiment, there is provided a writing method. The method includes setting potentials of a plurality of word lines to a first potential. The first potential is a potential to allow memory cells corresponding to a selective bit line to be in on state. The method also includes setting potentials of non-adjacent word lines to a second potential while maintaining potentials of adjacent word lines at a potential which allows the memory cells corresponding to the selective bit line to be in on state and setting a potential of a selective word line to a third potential. The second potential is a potential which is determined so as to allow the memory cells corresponding to the selective bit line to be in off state. The third potential is a potential where data is written in the selective memory cell corresponding to the selective bit line.