Invention Grant
- Patent Title: Method for forming photomasks
- Patent Title (中): 形成光掩模的方法
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Application No.: US13633876Application Date: 2012-10-03
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Publication No.: US08748066B2Publication Date: 2014-06-10
- Inventor: Hsin-Yu Chen , Chia-Wei Huang , Chun-Hsien Huang , Shih-Chun Tsai , Kai-Lin Chuang
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: G03F9/00
- IPC: G03F9/00
Abstract:
A method for forming photomasks includes the following steps. A first photomask including a first target pattern and a first unprintable dummy pattern is provided. A second photomask including a second target pattern and a second printable dummy pattern are provided, wherein at least part of the second printable dummy pattern overlapping the first unprintable dummy pattern exposure limit, such that the second printable dummy pattern can not be printed in a wafer.
Public/Granted literature
- US20140093814A1 METHOD FOR FORMING PHOTOMASKS Public/Granted day:2014-04-03
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