发明授权
- 专利标题： High voltage dedicated charging port
- 专利标题（中）： 高压专用充电口
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申请号： US13759865申请日： 2013-02-05
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公开(公告)号： US08745301B2公开(公告)日： 2014-06-03
- 发明人: Shadi Hawawini , Georgios K. Paparrizos
- 申请人： QUALCOMM Incorportated
- 申请人地址： US CA San Diego
- 专利权人： Qualcomm Incorporated
- 当前专利权人： Qualcomm Incorporated
- 当前专利权人地址： US CA San Diego
- 代理机构： Fountainhead Law Group P.C.
- 主分类号： G06F13/36
- IPC分类号： G06F13/36 ; G06F13/00 ; G06F1/00 ; H02J7/00 ; G06F1/32 ; G06F1/26 ; G01R19/25
摘要：
Circuitry in a portable device may be attached to external device, such as a power supply, to receive a voltage at a desired voltage level from the external device. The circuitry may assert one of several electrical configurations on the cabling that electrically connects the portable device to the external device to indicate to the external device a desired voltage level.
公开/授权文献
- US20140117923A1 HIGH VOLTAGE DEDICATED CHARGING PORT 公开/授权日：2014-05-01
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