发明授权
- 专利标题： Device with a vertical gate structure
- 专利标题（中）： 具有垂直栅极结构的器件
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申请号： US13568997申请日： 2012-08-07
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公开(公告)号： US08742492B2公开(公告)日： 2014-06-03
- 发明人: Hak-Lay Chuang , Ming Zhu , Yi-Ren Chen
- 申请人： Hak-Lay Chuang , Ming Zhu , Yi-Ren Chen
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
A device includes a wafer substrate, a conical frustum structure formed in the wafer substrate, and a gate all-around (GAA) structure circumscribing the middle portion of the conical frustum structure. The conical frustum structure includes a drain formed at a bottom portion of the conical frustum, a source formed at a top portion of the vertical conical frustum, and a channel formed at a middle portion of the conical frustum connecting the source and the drain. The GAA structure overlaps with the source at one side of the GAA structure, crosses over the channel, and overlaps with the drain at another side of the GAA structure.
公开/授权文献
- US20140042524A1 Device with a Vertical Gate Structure 公开/授权日：2014-02-13
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