发明授权
US08741729B2 Dual contact trench resistor and capacitor in shallow trench isolation (STI) and methods of manufacture
有权
双接触沟槽电阻和电容器在浅沟槽隔离（STI）和制造方法
- 专利标题： Dual contact trench resistor and capacitor in shallow trench isolation (STI) and methods of manufacture
- 专利标题（中）： 双接触沟槽电阻和电容器在浅沟槽隔离（STI）和制造方法
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申请号： US13939694申请日： 2013-07-11
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公开(公告)号： US08741729B2公开(公告)日： 2014-06-03
- 发明人: Timothy W. Kemerer , James S. Nakos , Steven M. Shank
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Roberts Mlotkowski Safran & Cole, P.C.
- 代理商 Richard Kotulak
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A resistor and capacitor are provided in respective shallow trench isolation structures. The method includes forming a first and second trench in a substrate and forming a first insulator layer within the first and second trench. The method includes forming a first electrode material within the first and second trench, on the first insulator layer, and forming a second insulator layer within the first and second trench and on the first electrode material. The method includes forming a second electrode material within the first and second trench, on the second insulator layer. The second electrode material pinches off the second trench. The method includes removing a portion of the second electrode material and the second insulator layer at a bottom portion of the first trench, and filling in the first trench with additional second electrode material. The additional second electrode material is in electrical contact with the first electrode material.
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