Invention Grant
US08741672B2 Crystallization method of thin film transistor, thin film transistor array panel and manufacturing method for thin film transistor array panel
有权
薄膜晶体管,薄膜晶体管阵列面板的结晶方法及薄膜晶体管阵列面板的制造方法
- Patent Title: Crystallization method of thin film transistor, thin film transistor array panel and manufacturing method for thin film transistor array panel
- Patent Title (中): 薄膜晶体管,薄膜晶体管阵列面板的结晶方法及薄膜晶体管阵列面板的制造方法
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Application No.: US13535007Application Date: 2012-06-27
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Publication No.: US08741672B2Publication Date: 2014-06-03
- Inventor: Joo-Han Kim , Hwa-Dong Jung , Wan-Soon Lim , Jee-Hun Lim , Joo Seok Yeom , Tae-Kyung Yim , Jae-Hak Lee , Hyuk Soon Kwon , Hyoung Cheol Lee , Jeong-Ju Park , Se-Myung Kwon , So-Young Koo
- Applicant: Joo-Han Kim , Hwa-Dong Jung , Wan-Soon Lim , Jee-Hun Lim , Joo Seok Yeom , Tae-Kyung Yim , Jae-Hak Lee , Hyuk Soon Kwon , Hyoung Cheol Lee , Jeong-Ju Park , Se-Myung Kwon , So-Young Koo
- Applicant Address: KR Yongin
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2011-0080820 20110812
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84

Abstract:
Exemplary embodiments of the invention disclose a method of manufacturing a thin film transistor array panel having reduced overall processing time and providing a uniform crystallization. Exemplary embodiments of the invention also disclose a crystallization method of a thin film transistor, including forming on a substrate a semiconductor layer including a first pixel area, a second pixel area, and a third pixel area. The crystallization method includes crystallizing a portion of the semiconductor layer corresponding to a channel region of a thin film transistor using a micro lens array.
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