发明授权
- 专利标题： Density of states engineered field effect transistor
- 专利标题（中）： 状态设计场效应晶体管的密度
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申请号： US12974775申请日： 2010-12-21
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公开(公告)号： US08735903B2公开(公告)日： 2014-05-27
- 发明人: Matthias Passlack
- 申请人： Matthias Passlack
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L29/15
- IPC分类号： H01L29/15
摘要：
Layer structures for use in density of states (“DOS”) engineered FETs are described. One embodiment comprises a layer structure for use in fabricating an n-channel transistor. The layer structure includes a first semiconductor layer having a conduction band minimum EC1; a second semiconductor layer having a discrete hole level H0; a wide bandgap semiconductor barrier layer disposed between the first and the second semiconductor layers; a gate dielectric layer disposed above the first semiconductor layer; and a gate metal layer disposed above the gate dielectric layer; wherein the discrete hole level H0 is positioned below the conduction band minimum Ec1 for zero bias applied to the gate metal layer.
公开/授权文献
- US20110193091A1 DENSITY OF STATES ENGINEERED FIELD EFFECT TRANSISTOR 公开/授权日：2011-08-11
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