发明授权
- 专利标题： Light emitting device and fabrication method thereof
- 专利标题（中）： 发光元件及其制造方法
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申请号： US13967019申请日： 2013-08-14
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公开(公告)号： US08735185B2公开(公告)日： 2014-05-27
- 发明人: Yeo Jin Yoon , Chang Yeon Kim
- 申请人： Seoul Opto Device Co., Ltd.
- 申请人地址： KR Ansan-si
- 专利权人： Seoul Opto Device Co., Ltd.
- 当前专利权人： Seoul Opto Device Co., Ltd.
- 当前专利权人地址： KR Ansan-si
- 代理机构： H.C. Park & Associates, PLC
- 优先权： KR10-2006-0136681 20061228; KR10-2006-0136682 20061228; KR10-2006-0136683 20061228
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
The present invention relates to a method of fabricating a patterned substrate for fabricating a light emitting diode (LED), the method including forming an aluminum layer on a substrate, forming an anodic aluminum oxide (AAO) layer having a large number of holes formed therein by performing an anodizing treatment of the aluminum layer, partially etching a surface of the substrate using the aluminum layer with the large number of the holes as a shadow mask, thereby forming patterns, and removing the aluminum layer from the substrate.
公开/授权文献
- US20130330866A1 LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF 公开/授权日：2013-12-12
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