Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device

Invention Grant

US08716209B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device 有权

Title translation: 用于硅介电膜的蚀刻后处理剂，半导体器件的制造方法以及半导体器件

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Patent Title: Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device
Patent Title (中): 用于硅介电膜的蚀刻后处理剂，半导体器件的制造方法以及半导体器件
Application No.: US12560193

Application Date: 2009-09-15
Publication No.: US08716209B2

Publication Date: 2014-05-06
Inventor: Yasushi Kobayashi , Kouta Yoshikawa , Yoshihiro Nakata , Tadahiro Imada , Shirou Ozaki
Applicant: Yasushi Kobayashi , Kouta Yoshikawa , Yoshihiro Nakata , Tadahiro Imada , Shirou Ozaki
Applicant Address: JP Kawasaki
Assignee: Fujitsu Limited
Current Assignee: Fujitsu Limited
Current Assignee Address: JP Kawasaki
Agency: Westerman, Hattori, Daniels & Adrian, LLP
Main IPC: H01L21/306
IPC: H01L21/306 ; C11D11/00 ; H01L21/3105

Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device

Abstract:

The invention provides an agent for post-etch treating a silicon dielectric film, including: at least one nitrogen-containing substance selected from the group consisting of ammonium bases and amine compounds; an acid; and at least one silicon-containing compound containing silicon, carbon and hydrogen. According to the present invention, it becomes possible to suppress an increase in the dielectric constant of a silicon dielectric film caused by etching.

Abstract(Chinese):

本发明提供了一种用于蚀刻后处理硅介电膜的试剂，包括：至少一种选自铵基和胺化合物的含氮物质; 酸; 和含有硅，碳和氢的至少一种含硅化合物。根据本发明，可以抑制由蚀刻引起的硅电介质膜的介电常数的增加。

Public/Granted literature

US20100007031A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Public/Granted day:2010-01-14

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）