发明授权
- 专利标题： Single check memory devices and methods
- 专利标题（中）： 单一检查存储器件和方法
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申请号： US12975494申请日： 2010-12-22
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公开(公告)号： US08711616B2公开(公告)日： 2014-04-29
- 发明人: Vishal Sarin , Aaron Yip , Tomoharu Tanaka
- 申请人： Vishal Sarin , Aaron Yip , Tomoharu Tanaka
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Schwegman, Lundberg & Woessner, P.A.
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
Memory devices and methods of operating memory devices are shown. Configurations described include circuits to perform a single check between programming pulses to determine a threshold voltage with respect to desired benchmark voltages. In one example, the benchmark voltages are used to change a programming speed of selected memory cells.
公开/授权文献
- US20120163076A1 SINGLE CHECK MEMORY DEVICES AND METHODS 公开/授权日：2012-06-28
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