Invention Grant
- Patent Title: Power storage device and method for manufacturing the same
- Patent Title (中): 蓄电装置及其制造方法
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Application No.: US13596163Application Date: 2012-08-28
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Publication No.: US08709654B2Publication Date: 2014-04-29
- Inventor: Toshihiko Takeuchi , Minoru Takahashi , Takeshi Osada , Teppei Oguni , Takuya Hirohashi , Hiroyuki Tomisu
- Applicant: Toshihiko Takeuchi , Minoru Takahashi , Takeshi Osada , Teppei Oguni , Takuya Hirohashi , Hiroyuki Tomisu
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon & Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2011-189335 20110831
- Main IPC: H01M4/36
- IPC: H01M4/36 ; H01M4/64

Abstract:
A power storage device including a negative electrode having high cycle performance in which little deterioration due to charge and discharge occurs is manufactured. A power storage device including a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode is manufactured, in which the negative electrode includes a negative electrode current collector and a negative electrode active material layer, and the negative electrode active material layer includes an uneven silicon layer formed over the negative electrode current collector, a silicon oxide layer or a mixed layer which includes silicon oxide and a silicate compound and is in contact with the silicon layer, and graphene in contact with the silicon oxide layer or the mixed layer including the silicon oxide and the silicate compound.
Public/Granted literature
- US20130316243A2 POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-11-28
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