To provide a nonvolatile memory circuit having a novel structure. A first memory circuit, a second memory circuit, a first switch, a second switch, and a phase inverter circuit are included. The first memory circuit includes a first transistor formed using an oxide semiconductor film, a second transistor, a third transistor, and a capacitor. The first transistor formed using an oxide semiconductor film and the capacitor are used to form the nonvolatile memory circuit. Reductions in number of power supply lines and signal lines which are connected to the memory circuit and transistors used in the memory circuit allow a reduction in circuit scale of the nonvolatile memory circuit.