Invention Grant
US08697583B2 Oxidation-promoting compositions, methods of forming oxide layers, and methods of fabricating semiconductor devices
有权
氧化促进组合物，形成氧化物层的方法，以及制造半导体器件的方法
- Patent Title: Oxidation-promoting compositions, methods of forming oxide layers, and methods of fabricating semiconductor devices
- Patent Title (中): 氧化促进组合物，形成氧化物层的方法，以及制造半导体器件的方法
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Application No.: US13224737Application Date: 2011-09-02
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Publication No.: US08697583B2Publication Date: 2014-04-15
- Inventor: Kyung-seok Oh , Kyung-mun Byun , Shin-hye Kim , Deok-young Jung , Gil-heyun Choi , Eunkee Hong
- Applicant: Kyung-seok Oh , Kyung-mun Byun , Shin-hye Kim , Deok-young Jung , Gil-heyun Choi , Eunkee Hong
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2010-0086174 20100902
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
Provided according to embodiments of the present invention are an oxidation-promoting compositions, methods of forming oxide layers, and methods of fabricating semiconductor devices. In some embodiments of the invention, the oxidation-promoting composition includes an oxidation-promoting agent having a structure of A-M-L, wherein L is a functional group that is chemisorbed to a surface of silicon, silicon oxide, silicon nitride, or metal, A is a thermally decomposable oxidizing functional group, and M is a moiety that allows A and L to be covalently bonded to each other.
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