发明授权
- 专利标题： Double diffused drain metal oxide semiconductor device and manufacturing method thereof
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申请号： US13555163申请日： 2012-07-22
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公开(公告)号： US08686504B2公开(公告)日： 2014-04-01
- 发明人: Tsung-Yi Huang , Chien-Hao Huang
- 申请人： Tsung-Yi Huang , Chien-Hao Huang
- 申请人地址： TW Hsin-Chu
- 专利权人： Richtek Technology Corporation, R.O.C.
- 当前专利权人： Richtek Technology Corporation, R.O.C.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Tung & Associates
- 主分类号： H01L29/66
- IPC分类号： H01L29/66
摘要：
The present invention discloses a double diffused drain metal oxide semiconductor (DDDMOS) device and a manufacturing method thereof. The DDDMOS device is formed in a substrate, and includes a first well, a gate, a diffusion region, a source, and a drain. A low voltage device is also formed in the substrate, which includes a second well and a lightly doped drain (LDD) region, wherein the first well and the diffusion region are formed by process steps which also form the second well and the LDD region in the low voltage device, respectively.
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