发明授权
- 专利标题： Method of manufacturing semiconductor device and substrate processing apparatus
- 专利标题（中）： 制造半导体器件和衬底处理设备的方法
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申请号： US12822317申请日： 2010-06-24
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公开(公告)号： US08685866B2公开(公告)日： 2014-04-01
- 发明人: Sadayoshi Horii , Atsushi Sano , Masahito Kitamura , Yoshitake Kato
- 申请人： Sadayoshi Horii , Atsushi Sano , Masahito Kitamura , Yoshitake Kato
- 申请人地址： JP Tokyo JP Tokyo
- 专利权人： Hitachi Kokusai Electric, Inc.,Renesas Electronics Corp.
- 当前专利权人： Hitachi Kokusai Electric, Inc.,Renesas Electronics Corp.
- 当前专利权人地址： JP Tokyo JP Tokyo
- 代理机构： Brundidge & Stanger, P.C.
- 优先权： JP2009-161171 20090707
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
A method of manufacturing a semiconductor device including alternately repeating a process of forming a first metal oxide film including a first metal element and a process of forming a second metal oxide film including a second metal element on a substrate accommodated in a processing chamber, so as to form a third metal oxide film including the first and second metal elements with a predetermined composition ratio on the substrate. One of the first and second metal elements of the third metal oxide film has a concentration higher than a concentration of the other, and one of the first and second metal oxide films including the higher-concentration metal element is formed in a chemical vapor deposition (CVD) mode or an atomic layer deposition (ALD) saturation mode, and the other of the first and second metal oxide films is formed in an ALD unsaturation mode.
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