发明授权
- 专利标题： Solid-state imaging device
- 专利标题（中）： 固态成像装置
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申请号： US13462895申请日： 2012-05-03
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公开(公告)号： US08680640B2公开(公告)日： 2014-03-25
- 发明人: Mitsuyoshi Mori , Toru Okino , Yutaka Hirose , Yoshihisa Kato
- 申请人： Mitsuyoshi Mori , Toru Okino , Yutaka Hirose , Yoshihisa Kato
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： Panasonic Patent Center
- 优先权： JP2009-267550 20091125
- 主分类号： H01L27/148
- IPC分类号： H01L27/148
摘要：
A solid-state imaging device includes semiconductor substrate; a plurality of photoelectric conversion sections of n-type that are formed at an upper part of semiconductor substrate and arranged in a matrix; output circuit that is formed on a charge detection surface that is one surface of semiconductor substrate and detects charges stored in photoelectric conversion sections; a plurality of isolating diffusion layers of a p-type that are formed under output circuit and include high concentration p-type layers adjacent to respective photoelectric conversion sections; and color filters formed on a light incident surface that is the other surface opposing the one surface of semiconductor substrate and transmit light with different wavelengths. Shapes of respective photoelectric conversion sections correspond to color filters and differ depending on the high concentration p-type layer configuring isolating diffusion layer.
公开/授权文献
- US20120211851A1 SOLID-STATE IMAGING DEVICE 公开/授权日：2012-08-23
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