发明授权
- 专利标题： Asymmetric sense amplifier design
- 专利标题（中）： 非对称放大器设计
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申请号： US13886120申请日： 2013-05-02
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公开(公告)号： US08675435B2公开(公告)日： 2014-03-18
- 发明人: Ching-Wei Wu , Kuang Ting Chen , Cheng-Hung Lee
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： G11C7/00
- IPC分类号： G11C7/00
摘要：
A circuit includes a first inverter including a first PMOS transistor and a first NMOS transistor, and a second inverter including a second PMOS transistor and a second NMOS transistor. A first node is connected to gates of the first PMOS transistor and the first NMOS transistor and drains of the second PMOS transistor and the second NMOS transistor. A second node is connected to gates of the second PMOS transistor and the second NMOS transistor and drains of the first PMOS transistor and the first NMOS transistor. The circuit further includes a first capacitor having a first capacitance connected to the first node; and a second capacitor having a second capacitance connected to the second node. The second capacitance is greater than the first capacitance.
公开/授权文献
- US20130235687A1 Asymmetric Sense Amplifier Design 公开/授权日：2013-09-12
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