发明授权
US08675346B2 Mesoporous nanocrystalline film architecture for capacitive storage devices
有权
用于电容式存储设备的介孔纳米晶膜结构
- 专利标题: Mesoporous nanocrystalline film architecture for capacitive storage devices
- 专利标题(中): 用于电容式存储设备的介孔纳米晶膜结构
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申请号: US13177401申请日: 2011-07-06
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公开(公告)号: US08675346B2公开(公告)日: 2014-03-18
- 发明人: Bruce S. Dunn , Sarah H. Tolbert , John Wang , Torsten Brezesinski
- 申请人: Bruce S. Dunn , Sarah H. Tolbert , John Wang , Torsten Brezesinski
- 申请人地址: US CA Oakland
- 专利权人: The Regents of the University of California
- 当前专利权人: The Regents of the University of California
- 当前专利权人地址: US CA Oakland
- 代理商 John P. O'Banion
- 主分类号: H01G9/00
- IPC分类号: H01G9/00
摘要:
A mesoporous, nanocrystalline, metal oxide construct particularly suited for capacitive energy storage that has an architecture with short diffusion path lengths and large surface areas and a method for production are provided. Energy density is substantially increased without compromising the capacitive charge storage kinetics and electrode demonstrates long term cycling stability. Charge storage devices with electrodes using the construct can use three different charge storage mechanisms immersed in an electrolyte: (1) cations can be stored in a thin double layer at the electrode/electrolyte interface (non-faradaic mechanism); (2) cations can interact with the bulk of an electroactive material which then undergoes a redox reaction or phase change, as in conventional batteries (faradaic mechanism); or (3) cations can electrochemically adsorb onto the surface of a material through charge transfer processes (faradaic mechanism).
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