发明授权
- 专利标题： Method of manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US13038821申请日： 2011-03-02
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公开(公告)号： US08668553B2公开(公告)日： 2014-03-11
- 发明人: Hayato Korogi
- 申请人： Hayato Korogi
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2009-005460 20090114
- 主分类号： B24B1/00
- IPC分类号： B24B1/00
摘要：
A method for manufacturing a semiconductor device includes the step of polishing a conductive film formed over a semiconductor substrate. The conductive film is formed by a barrier film that is in contact with second and third interlayer insulating films, and a copper film that is in contact with the barrier film. A polishing surface of a second polishing pad for polishing and removing the barrier film and the third interlayer insulating film has a lower pore area ratio than a polishing surface of a first polishing pad for polishing and removing the copper film.
公开/授权文献
- US20110151751A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日：2011-06-23
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