Invention Grant
US08658546B2 Solution composition for forming oxide thin film and electronic device including the oxide thin film
有权
用于形成氧化物薄膜的溶液组合物和包括氧化物薄膜的电子器件
- Patent Title: Solution composition for forming oxide thin film and electronic device including the oxide thin film
- Patent Title (中): 用于形成氧化物薄膜的溶液组合物和包括氧化物薄膜的电子器件
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Application No.: US13650819Application Date: 2012-10-12
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Publication No.: US08658546B2Publication Date: 2014-02-25
- Inventor: Jong-Baek Seon , Hyun-Jae Kim , Sang-Yoon Lee , Myung-Kwan Ryu , Hyun-Soo Shin , Kyung-Bae Park , Woong-Hee Jeong , Gun-hee Kim , Byung-Du Ahn
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do KR Seoul
- Assignee: Samsung Electronics Co., Ltd.,Industry-Academic Cooperation Foundation
- Current Assignee: Samsung Electronics Co., Ltd.,Industry-Academic Cooperation Foundation
- Current Assignee Address: KR Gyeonggi-do KR Seoul
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2009-0031000 20090409; KR10-2010-0026314 20100324
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1.
Public/Granted literature
- US20130036943A1 SOLUTION COMPOSITION FOR FORMING OXIDE THIN FILM AND ELECTRONIC DEVICE INCLUDING THE OXIDE THIN FILM Public/Granted day:2013-02-14
Information query
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