Invention Grant
US08652952B2 Semiconductor structure made using improved multiple ion implantation process
失效
使用改进的多离子注入工艺制造的半导体结构
- Patent Title: Semiconductor structure made using improved multiple ion implantation process
- Patent Title (中): 使用改进的多离子注入工艺制造的半导体结构
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Application No.: US13471932Application Date: 2012-05-15
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Publication No.: US08652952B2Publication Date: 2014-02-18
- Inventor: Sarko Cherekdjian
- Applicant: Sarko Cherekdjian
- Applicant Address: US NY Corning
- Assignee: Corning Incorporated
- Current Assignee: Corning Incorporated
- Current Assignee Address: US NY Corning
- Agent Ryan T. Hardee
- Main IPC: H01L21/26
- IPC: H01L21/26 ; H01L21/42
Abstract:
Methods and apparatus provide for: a first source of plasma, wherein the plasma includes a first species of ions; a second source of plasma, wherein the plasma includes a second species of ions; selection of the plasma from the first and second sources; and acceleration the first species of ions or the second species of ions toward a semiconductor wafer.
Public/Granted literature
- US20120231616A1 SEMICONDUCTOR STRUCTURE MADE USING IMPROVED MULTIPLE ION IMPLANTATION PROCESS Public/Granted day:2012-09-13
Information query
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