发明授权
- 专利标题： Thin film transistor and fabricating method thereof
- 专利标题（中）： 薄膜晶体管及其制造方法
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申请号： US13097082申请日： 2011-04-29
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公开(公告)号： US08647934B2公开(公告)日： 2014-02-11
- 发明人: Liu-Chung Lee , Hung-Che Ting , Chia-Yu Chen
- 申请人： Liu-Chung Lee , Hung-Che Ting , Chia-Yu Chen
- 申请人地址： TW Hsinchu
- 专利权人： Au Optronics Corporation
- 当前专利权人： Au Optronics Corporation
- 当前专利权人地址： TW Hsinchu
- 代理机构： Jianq Chyun IP Office
- 优先权： TW99146936A 20101230
- 主分类号： H01L21/84
- IPC分类号： H01L21/84
摘要：
A thin film transistor (TFT) including a gate, a gate insulator, an oxide semiconductor channel layer, a source, and a drain is provided. The gate insulator covers the gate, while the oxide semiconductor channel layer is configured on the gate insulator and located above the gate. The oxide semiconductor channel layer includes a first sub-layer and a second sub-layer located on the first sub-layer. An oxygen content of the first sub-layer is lower than an oxygen content of the second sub-layer. The source and the drain are configured on a portion of the second sub-layer. In addition, a fabricating method of the above-mentioned TFT is also provided.
公开/授权文献
- US20120168743A1 THIN FILM TRANSISTOR AND FABRICATING METHOD THEREOF 公开/授权日：2012-07-05
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