发明授权
- 专利标题: Semiconductor storage device
- 专利标题(中): 半导体存储设备
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申请号: US13367420申请日: 2012-02-07
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公开(公告)号: US08638610B2公开(公告)日: 2014-01-28
- 发明人: Takeharu Imai , Hiroki Takagi
- 申请人: Takeharu Imai , Hiroki Takagi
- 申请人地址: JP Kyoto
- 专利权人: Rohm Co., Ltd.
- 当前专利权人: Rohm Co., Ltd.
- 当前专利权人地址: JP Kyoto
- 代理机构: Fish & Richardson P.C.
- 优先权: JP2011-023754 20110207
- 主分类号: G11C11/34
- IPC分类号: G11C11/34
摘要:
The invention provides a semiconductor storage device which can restrain the uneven high voltage applied to the storage unit and can provide the high voltage with high precision. The semiconductor storage device includes a storage unit array, a Y decoder circuit, a X decoder circuit, a sense amplifier circuit, a Y gate circuit, a high voltage generating circuit, a high voltage regulator circuit, and a voltage adjusting circuit. The voltage modifying data for adjusting the potential of the anode of the zener diode so as to adjust the high voltage applied to the storage unit array is written into the storage unit array. The voltage modifying data is used to adjust voltage by the voltage adjusting circuit.
公开/授权文献
- US20120201081A1 SEMICONDUCTOR STORAGE DEVICE 公开/授权日:2012-08-09
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